): The negative voltage required on Gate 1 to completely shut down the drain current. Typically ranges between -0.5V and -2.5V. Gate 2 Cut-off Voltage (
: This allowed for better control and gain, making it ideal for RF (radio frequency) amplification. Fast Switching : Its low
Before designing any circuit, you must respect the limits listed below. Exceeding these values will destroy the MOSFET, as it is extremely static-sensitive.
To download the complete PDF graphic layout, search archiving platforms like AllDatasheet . 3sk41 datasheet
These typical or guaranteed values define how the device behaves in normal operation.
The 3SK41 was specifically intended for use in , where its low noise figure and high input impedance were critical for achieving good sensitivity in FM tuners and other RF front‑ends. It was part of a family of Japanese dual‑gate MOSFETs, with the “3S” prefix indicating a four‑lead, single‑ended, high‑frequency device.
: In many circuits, it can be part of a broader series of "3SK" transistors (like the 3SK35 or 3SK40) depending on the specific voltage and gain requirements of your project. Jotrin Electronics Are you looking to use this for a new RF design 3SK41 - NEC/HITACHI/MOTOROLA - Jotrin ): The negative voltage required on Gate 1
Minimizes distortion in amplified signals.
In the world of RF (Radio Frequency) design, certain components achieve legendary status not because of flashy marketing, but due to pure performance and reliability. The is one such component. While it is now considered an obsolete or "end-of-life" (EOL) part, this N-channel dual-gate MOSFET remains highly sought after by vintage radio restorers, HF amplifier builders, and electronics hobbyists.
The is a technical blueprint for a classic N-channel dual-gate MOSFET , a component primarily known for its role in high-frequency applications like RF amplifiers and mixers. Key Specifications & Features Fast Switching : Its low Before designing any
Disclaimer: All specifications cited are based on historical datasheets. Electrical characteristics may vary between manufacturers (Hitachi vs. NEC). Always verify with the component in hand.
Gallium Arsenide (GaAs) for superior electron mobility. Configuration: Dual-Gate N-Channel depletion mode. Primary Focus: Low noise figure and high power gain.